Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation
Document Type
Article
Publication Date
2-2018
Abstract
We report the molecular beam epitaxy growth of high-quality p-InAs thin films evaluated in the context of 1.55 μm femtosecond laser-excited THz emission efficiency. The presence of p-InAs is confirmed via scanning electron microscopy and X-ray diffraction. Using a GaAs buffer layer, the epitaxial growth of p-InAs layers was successfully achieved. Initiating GaAs deposition by growth interruption, we find that GaAs adheres to the GaSb substrate and provides a quasi-planar surface for the subsequent layers. We also find a significant enhancement in the THz radiation intensity of p-InAs films that is approximately twice compared to that of bulk p-InAs for 1.55 μm wavelength.
Recommended Citation
Sadia, Cyril P.; Lopez, Lorenzo P. Jr; Delos Santos, Ramon M.; Muldera, Joselito E.; De Los Reyes, Alexander E.; Tumanguil, Mae Agatha C.; Que, Christopher T.; Magusara, Valynn Katrine; Tani, Masahiko; Somintac, Armando S.; Estacio, Elmer S.; and Salvado, Arnel A., (2018). Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation. Archīum.ATENEO.
https://archium.ateneo.edu/physics-faculty-pubs/52