Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation
We report the molecular beam epitaxy growth of high-quality p-InAs thin films evaluated in the context of 1.55 μm femtosecond laser-excited THz emission efficiency. The presence of p-InAs is confirmed via scanning electron microscopy and X-ray diffraction. Using a GaAs buffer layer, the epitaxial growth of p-InAs layers was successfully achieved. Initiating GaAs deposition by growth interruption, we find that GaAs adheres to the GaSb substrate and provides a quasi-planar surface for the subsequent layers. We also find a significant enhancement in the THz radiation intensity of p-InAs films that is approximately twice compared to that of bulk p-InAs for 1.55 μm wavelength.
Cyril P. Sadia, Lorenzo P. Lopez, Ramon M. delos Santos, Joselito E. Muldera, Alexander E. De Los Reyes, Mae Agatha C. Tumanguil, Christopher T. Que, Valynn Katrine Mag-usara, Masahiko Tani, Armando S. Somintac, Elmer S. Estacio, Arnel A. Salvador, Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation, Thin Solid Films, Volume 648, 2018, Pages 46-49, ISSN 0040-6090, https://doi.org/10.1016/j.tsf.2017.12.022.